| 摘要 |
PROBLEM TO BE SOLVED: To provide a single wafer substrate processing apparatus and method in which resist can be removed well from a substrate by using ozone water.SOLUTION: The substrate processing apparatus includes a spin chuck for holding a wafer W, a blocking plate 6 having a facing surface 15 that faces the surface of the wafer W, a liquid nozzle 17 having a liquid discharge opening 18 opening to the facing surface 15, and a gas nozzle 21 having a gas discharge opening 22 opening to the facing surface 15. The facing surface 15 of the blocking plate 6 is disposed to face the surface of the wafer W held by a spin chuck 3 at an interval S of 1 mm or more and 5 mm or less. Ozone water is discharged from the liquid discharge opening 18. Inert gas is discharged from the gas discharge opening 22 at a flow rate of 80 liter/min or more and 120 liter/min or less. The inert gas discharged from the gas discharge opening 22 is blown to the ozone water flowing on the surface of the wafer W. |
