发明名称 METHOD OF MANUFACTURING POLYSILICON USING APPARATUS FOR MANUFACTURING POLYSILICON BASED ELECTRON-BEAM MELTING USING DUMMY BAR
摘要 PURPOSE: A poly-silicon manufacturing device and method of electronic beam melting base are provided to maximize elimination efficiency of metallic impurities by applying a dummy bar when unidirectionally coagulating molten silicon. CONSTITUTION: The inside of a vacuum chamber(110) is maintained under high-vacuum atmosphere. A first electron gun(120a) and a second electron gun(120b) radiate electron beam in the inner side of the vacuum chamber. A silicon melting unit(130) is arranged is arranged in a first electron beam radiation area. A one-way solidification unit(140) is arranged in a second first electron beam radiation area. The one-way solidification unit comprises a start block(145) transferring molten silicon to a down direction.
申请公布号 KR101356442(B1) 申请公布日期 2014.02.03
申请号 KR20100120059 申请日期 2010.11.29
申请人 发明人
分类号 C30B11/00;C30B29/06;H01L21/02 主分类号 C30B11/00
代理机构 代理人
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