APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL TO BE USED FOR SOLUTION-GROWTH METHOD, CRUCIBLE TO BE USED FOR THE SAME, AND METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an apparatus and a method for manufacturing a SiC single crystal in which carbon is easily supplied to a part of a SiC solution in a vicinity of a seed crystal in an apparatus for manufacturing a SiC single crystal to be used for a solution-growth method.SOLUTION: An apparatus to be used for a solution-growth method comprises: a seed shaft 28 and a crucible 14, in which a seed crystal 32 is attached to a bottom end surface of the seed shaft 28, in which the crucible 14 stores a SiC solution, and in which the crucible 14 is provided with an inner lid 38. The inner lid 38 comprises: a penetration hole 40 and is placed below a surface of the SiC solution when the solution is stored in the crucible 14. With the inner lid 38 being provided, since vortexes which occur in a vicinity of the surface of the solution (vortexes which occur in an upper storage 39U) and vortexes which occur in a vicinity of the bottom 36 of the crucible (vortexes which occur in a lower storage 39L) do not interfere with each other, an upward flow going through the penetration hole 40 toward the crystal growth surface of the SiC single crystal 32 is formed, which results in carbon being easily supplied to a vicinity of the SiC single crystal 32.