| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile storage device, etc., which are able to eliminate the step of deleting a value, written for inspection, by means of ultraviolet irradiation without making a structure special, and able to restrict manufacturing cost.SOLUTION: A nonvolatile storage memory comprises: a memory cell MC containing a floating gate FG; a coupling capacitance part FC; and a control line CL connected to the floating gate via the coupling capacitance part, and able to apply a predetermined potential to the memory cell. In a case where writing is carried out to the memory cell under a second condition in which an amount of charges injected into the floating gate is smaller than that in writing under a first condition, a first value is output in the first reading operation in which a first potential is applied to the control line whereas a second value is output in a second reading operation in which a second potential is applied to the control line. |
