发明名称 SPUTTERING TARGET AND METHOD FOR PRODUCING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a sputtering target of Cu-Ga sintered body capable of further reducing an oxygen content and suppressing an abnormal discharge, and a method for producing the same.SOLUTION: The sputtering target comprises a sintered body, which has a component composition containing 20 at% to less than 30 at% of Ga, and a remainder of Cu and inevitable impurities, in which a diffraction peak attributed to a γ phase and a diffraction peak attributed to a ζ phase of CuGa are observed via an X-ray diffraction. A main peak intensity of the diffraction peak attributed to the ζ phase is more than 10% of a main peak intensity of the diffraction peak attributed to the γ phase, an oxygen content is 100 ppm or less, and a mean particle diameter is 100 μm or less.
申请公布号 JP2014019934(A) 申请公布日期 2014.02.03
申请号 JP20120162291 申请日期 2012.07.23
申请人 MITSUBISHI MATERIALS CORP 发明人 IGARASHI KAZUNORI;WATANABE MUNEAKI;YOSHIDA YUUKI;ISHIYAMA KOICHI;MORI AKIRA
分类号 C23C14/34;C22C1/04;C22C9/00 主分类号 C23C14/34
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