发明名称 PROCESS GAS FLOW GUIDES FOR LARGE AREA PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEMS AND METHODS
摘要 The present invention provides methods and apparatus for a gas diffusion assembly in a deposition processing chamber. The invention includes a backing plate having an inlet for providing a process gas to a process chamber, a diffusion plate including a plurality of apertures for allowing the process gas to flow into the process chamber, a blocking plate disposed between the backing plate and the diffusion plate and including a plurality of apertures, and at least one gas flow guide disposed between the blocking plate and the backing plate and adapted to direct process gas flow laterally. Numerous additional features are disclosed.
申请公布号 US2014030056(A1) 申请公布日期 2014.01.30
申请号 US201313948232 申请日期 2013.07.23
申请人 APPLIED MATERIALS, INC. 发明人 LEE DONGSUH;PARK BEOM SOO;CUI YI;STERLING WILLIAM N.
分类号 F01D9/02 主分类号 F01D9/02
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