| 摘要 |
A semiconductor device an interlayer insulating layer disposed over a semiconductor substrate, and including a plurality of wiring layers; a seal ring disposed in the interlayer insulating layer, and surrounding a circuit region of the semiconductor substrate; a crack lead ring disposed in the interlayer insulating layer, and surrounding the seal ring; and a protective film disposed over the interlayer insulating layer, and covering the crack lead ring and the seal ring. The crack lead ring includes an uppermost wiring layer in an uppermost layer of a plurality of wiring layers. When the crack lead ring has a wiring in an underlayer below the uppermost layer, the uppermost layer wiring extends towards the outside of the device, relative to the wiring in the underlayer. The protective film has an end overlapped with an end of the uppermost layer wiring to form a step over the interlayer insulating layer. |
