发明名称 MEMRISTOR WITH EMBEDDED SWITCHING LAYER
摘要 A method of making a memristor having an embedded switching layer include exposing a surface portion of a first electrode material within a via to a reactive species to form the switching layer embedded within and at surface of the via. The via is in contact with a first conductor trace. The method further includes depositing a layer of a second electrode material adjacent to the via surface and patterning the layer into a column aligned with the via. The method further includes depositing an interlayer dielectric material to surround the column and providing a second conductor trace in electrical contact with the second electrode material of the column.
申请公布号 US2014027700(A1) 申请公布日期 2014.01.30
申请号 US201213562063 申请日期 2012.07.30
申请人 NICKEL JANICE H.;PICKETT MATTHEW D. 发明人 NICKEL JANICE H.;PICKETT MATTHEW D.
分类号 H01L45/00;H01L21/62 主分类号 H01L45/00
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