发明名称 |
MEMRISTOR WITH EMBEDDED SWITCHING LAYER |
摘要 |
A method of making a memristor having an embedded switching layer include exposing a surface portion of a first electrode material within a via to a reactive species to form the switching layer embedded within and at surface of the via. The via is in contact with a first conductor trace. The method further includes depositing a layer of a second electrode material adjacent to the via surface and patterning the layer into a column aligned with the via. The method further includes depositing an interlayer dielectric material to surround the column and providing a second conductor trace in electrical contact with the second electrode material of the column. |
申请公布号 |
US2014027700(A1) |
申请公布日期 |
2014.01.30 |
申请号 |
US201213562063 |
申请日期 |
2012.07.30 |
申请人 |
NICKEL JANICE H.;PICKETT MATTHEW D. |
发明人 |
NICKEL JANICE H.;PICKETT MATTHEW D. |
分类号 |
H01L45/00;H01L21/62 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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