发明名称 |
METHODS OF FORMING CAPACITORS |
摘要 |
A method of forming capacitors includes providing first capacitor electrodes within support material. The first capacitor electrodes contain TiN and the support material contains polysilicon. The polysilicon-containing support material is dry isotropically etched selectively relative to the TiN-containing first capacitor electrodes using a sulfur and fluorine-containing etching chemistry. A capacitor dielectric is formed over sidewalls of the first capacitor electrodes and a second capacitor electrode is formed over the capacitor dielectric. Additional methods are disclosed. |
申请公布号 |
US2014030863(A1) |
申请公布日期 |
2014.01.30 |
申请号 |
US201213559073 |
申请日期 |
2012.07.26 |
申请人 |
LUGANI GURPREET;TOREK KEVIN J.;MICRON TECHNOLOGY, INC. |
发明人 |
LUGANI GURPREET;TOREK KEVIN J. |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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