| 摘要 |
An embodiment of the invention provides a ferroelectric random access memory with a non-destructive read cycle. During the non-destructive read cycle, a plate of the ferroelectric capacitor in a selected one-capacitor, one-transistor memory cell and a bit line electrically connected to the selected one-capacitor, one-transistor memory cell are grounded. A word line electrically connected to a pass transistor in the one-capacitor, one-transistor selected memory cell is charged to a logical high value. The pass-transistor connects the bit line and the ferroelectric capacitor. The bit line is charged to a voltage less than the disturb voltage of the ferroelectric capacitor. The sense amplifier senses the voltage difference between the voltage on the bit line and a reference voltage. After the sensing occurs, the word line is grounded. |
