发明名称 |
DYNAMIC PROGRAMMING FOR FLASH MEMORY |
摘要 |
A method is for operating a memory having a group of non-volatile memory cells. A first programming pulse is applied to a subset of the group of non-volatile memory cells. The subset needs additional programming. A portion of the subset still needing additional programming is identified. A ratio of the number of memory cells in the subset and the number of memory cells in the portion is determined. A size of a second programming pulse based on the ratio is selected. The second programming pulse is applied to the portion. |
申请公布号 |
US2014029348(A1) |
申请公布日期 |
2014.01.30 |
申请号 |
US201314041697 |
申请日期 |
2013.09.30 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
TAN NING |
分类号 |
G11C16/10 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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