发明名称 DYNAMIC PROGRAMMING FOR FLASH MEMORY
摘要 A method is for operating a memory having a group of non-volatile memory cells. A first programming pulse is applied to a subset of the group of non-volatile memory cells. The subset needs additional programming. A portion of the subset still needing additional programming is identified. A ratio of the number of memory cells in the subset and the number of memory cells in the portion is determined. A size of a second programming pulse based on the ratio is selected. The second programming pulse is applied to the portion.
申请公布号 US2014029348(A1) 申请公布日期 2014.01.30
申请号 US201314041697 申请日期 2013.09.30
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 TAN NING
分类号 G11C16/10 主分类号 G11C16/10
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