SENSOR AND METHOD FOR MANUFACTURING SAME

摘要

Provided are a sensor and a method for manufacturing same. The sensor comprises: a substrate; a group of gate lines (30) and a group of data lines (31), arranged in a cross pattern; a plurality of sensing units arranged in an array and defined by the group of gate lines (30) and the group of data lines (31); and a group of bias lines (42b) passing through the sensing units. Each sensing unit comprises at least one sensing subunit consisting of a thin film transistor element and a photodiode sensing element. A passivation protection layer is arranged above a channel of the thin film transistor element. The thin film transistor element of the sensor provided in the present invention is of a bottom gate type. Compared to the prior art, the number of mask plates used in the sensor manufacturing process is reduced, the manufacturing cost is reduced, the manufacturing process is simplified, and the equipment capacity and the product yield are improved.