Device useful for thermal treatment of a semiconductor substrate, comprises susceptor, which forms the base of a process chamber and comprises substrate support base, substrate support ring and heat source

摘要

Device comprises a susceptor (2), which forms the base of a process chamber and comprises a substrate support base, a substrate support ring, which is attached to the substrate support base, and a heat source, which is arranged below the susceptor. The substrate support base (4) points with its upper side (7) in the direction of the process chamber and is at least surrounded by a circumferential wall. The upper side of the substrate support ring forms a receiving surface for supporting the edge of the substrate. The ring inner wall of the substrate support ring is bounded in a ring gap (14). Device comprises a susceptor (2), which comprises a substrate support base and forms the base of a process chamber, a substrate support ring, which is attached to the substrate support base, and a heat source, which is arranged below the susceptor. The substrate support base (4) points with its upper side (7) in the direction of the process chamber and is at least surrounded by a circumferential wall. The upper side of the substrate support ring forms a receiving surface for supporting the edge of the substrate. The ring inner wall of the substrate support ring is bounded in a mounted state of a ring gap (14) on the substrate support base to the circumferential wall of the substrate support base. The bottom side of the substrate support ring rests on a support shoulder. The upper sides of the substrate support base and the substrate support ring, which are loaded with the substrate, are heated to a process temperature during thermal treatment by the heat source. The radial distance of the gap from the center of the substrate support base is less than 80% radial distance of the outer edge (15) of the receiving surface for minimizing the lateral temperature jump in the region of the gap. The gap has a gap width, which is widening upwards to the mouth in the upper sides. An independent claim is also included for producing the device, comprising connecting together the substrate support base and the substrate support ring together without a gap on the basis of preliminary tests or calculations using models at the substrate support, determining a radial surface temperature profile, and placing the radial distance of the gap to a position, which lies radially inwardly to the temperature maximum.