SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

Disclosed is a semiconductor device, comprising a substrate, multiple gate stack structures provided on the substrate, multiple gate sidewall structures provided at two sides of each gate stack structure, and multiple source and drain regions provided in the substrate at two sides of each gate sidewall structure. The multiple gate stack structures comprises multiple first gate stack structures and multiple second gate stack structures, the first gate stack structure comprising a first gate insulating layer, a first barrier layer, a first work function adjusting layer, and a resistance adjusting layer; and the second gate stack structure comprising a second gate insulating layer, a first barrier layer, a second work function adjusting layer, a first work function adjusting layer, and a resistance adjusting layer. Through the semiconductor device and a manufacturing method thereof according to the present invention, an NMOS work function adjusting layer is first selectively deposited and then a PMOS work function adjusting layer is deposited, which simplifies the PMOS metal gate structure, and increases a space filled by the resistance adjusting layer and at the same time effectively controls the metal gate work function, thereby effectively reducing the gate resistance.