发明名称 |
Semiconductor substrate cutting method and method of manufacturing a semiconductor device |
摘要 |
<p>A semiconductor substrate cutting method which can efficiently cut a semiconductor substrate having a front face formed with a functional device together with a die bonding resin layer is provided. A wafer 11 having a front face 3 formed with a functional device 15 is irradiated with laser light L while positioning a light-converging point P within the wafer 11 with the rear face 17 of the wafer 11 acting as a laser light incident face, so as to generate multiphoton absorption, thereby forming a starting point region for cutting 8 due to a molten processed region 13 within the wafer 11 along a line along which the substrate should be cut 5. Consequently, a fracture can be generated from the starting point region for cutting 8 naturally or with a relatively small force, so as to reach the front face 3 and rear face 17. Therefore, when an expansion film 21 is attached to the rear face 17 of the wafer 11 by way of a die bonding resin layer 23 after forming the starting point region for cutting 8 and then expanded, the wafer 11 and die bonding resin layer 23 can be cut along the line along which the substrate should be cut 5.</p> |
申请公布号 |
IL216690(A) |
申请公布日期 |
2014.01.30 |
申请号 |
IL20110216690 |
申请日期 |
2011.11.30 |
申请人 |
HAMAMATSU PHOTONICS K.K.;FUMITSUGU FUKUYO;KENSHI FUKUMITSU;NAOKI UCHIYAMA;RYUJI SUGIURA;KAZUHIRO ATSUMI |
发明人 |
FUMITSUGU FUKUYO;KENSHI FUKUMITSU;NAOKI UCHIYAMA;RYUJI SUGIURA;KAZUHIRO ATSUMI |
分类号 |
B23K;H01L21/301;B23K26/08;B23K26/10;B23K26/40;H01L |
主分类号 |
B23K |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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