| 摘要 |
<p>PROVIDED IS A SPUTTERING TARGET WITH LOW GENERATION OF PARTICLES HAVING A TARGET SURFACE IN WHICH INTERMETALLIC COMPOUND OXIDES, CARBIDES, CARBONITRIDES AND OTHER SUBSTANCES WITHOUT DUCTILITY EXIST IN A HIGHLY DUCTILE MATRIX PHASE AT A VOLUME RATIO OF 1 TO 50%, WHEREIN A CENTER-LINE AVERAGE SURFACE ROUGHNESS Ra IS 0.1?M OR LESS, A TEN-POINT AVERAGE ROUGHNESS RZ IS 0.4?M OR LESS, A DISTANCE BETWEEN LOCAL PEAKS (ROUGHNESS MOTIF) AR IS 12O?M OR LESS, AND AN AVERAGE LENGTH OF WAVINESS MOTIF AW IS 1500?M OR MORE. PROVIDED ARE A SPUTTERING TARGET WHEREIN THE GENERATION OF NODULES AND PARTICLES UPON SPUTTERING CAN BE PREVENTED OR INHIBITED BY IMPROVING THE TARGET SURFACE, WHICH CONTAINS LARGE AMOUNTS OF SUBSTANCES WITHOUT DUCTILITY; AND A SURFACE PROCESSING METHOD THEREOF.</p> |
