| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion element capable of obtaining a high S/N ratio by reducing a dark current, and an image sensor.SOLUTION: The photoelectric conversion element includes a first electrode layer, a photoelectric conversion layer laminated on the first electrode layer, a hole injection blocking layer constituted of gallium oxide and laminated on the photoelectric conversion layer, and a second electrode layer laminated on the hole injection blocking layer and constituted of a translucent electrode material. |
