发明名称 ULTRA-DEEP POWER-DOWN MODE FOR MEMORY DEVICES
摘要 A memory device includes a voltage regulator, whose output provides a voltage supply for various other components of the memory device, including a command user interface. The memory device is placed into an ultra-deep power-down mode by providing to the memory device a software command, which causes the output of the voltage regulator to be disabled. To bring the memory device out of the ultra-deep power-down mode, a chip select signal is provided to the memory device, which includes a wake-up circuit that remains powered on even when the memory device is in the ultra-deep power-down mode. Receipt of the chip select signal while the memory device is in the ultra-deep power-down mode causes the output of the voltage regulator to be enabled, thereby providing power to the components that were completely powered down.
申请公布号 US2014032956(A1) 申请公布日期 2014.01.30
申请号 US201213559320 申请日期 2012.07.26
申请人 DE CARO RICHARD V.;MANEA DANUT;WANG YONGLIANG;TRINH STEPHEN;HILL PAUL;ATMEL CORPORATION 发明人 DE CARO RICHARD V.;MANEA DANUT;WANG YONGLIANG;TRINH STEPHEN;HILL PAUL
分类号 G06F1/32 主分类号 G06F1/32
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