发明名称 |
RESIST PATTERN FORMING METHOD, RESIST PATTERN, CROSSLINKABLE NEGATIVE CHEMICAL AMPLIFICATION RESIST COMPOSITION FOR ORGANIC SOLVENT DEVELOPMENT, RESIST FILM AND RESIST-COATED MASK BLANKS |
摘要 |
A resist pattern forming method contains: in the following order, (1) forming a resist film by using a negative chemical amplification resist composition containing (A) a polymer compound having a repeating unit represented by formula (1) as defined in the specification, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and (C) a crosslinking agent capable of crosslinking the polymer compound (A) by an action of an acid; (2) exposing the resist film, so as to form an exposed resist film; and (4) developing the exposed resist film by using a developer containing an organic solvent. |
申请公布号 |
US2014030640(A1) |
申请公布日期 |
2014.01.30 |
申请号 |
US201314035484 |
申请日期 |
2013.09.24 |
申请人 |
TSUCHIHASHI TORU;YATSUO TADATERU;TAKAHASHI KOUTAROU;TSUCHIMURA TOMOTAKA;FUJIFILM CORPORATION |
发明人 |
TSUCHIHASHI TORU;YATSUO TADATERU;TAKAHASHI KOUTAROU;TSUCHIMURA TOMOTAKA |
分类号 |
G03F7/20;G03F1/50;G03F7/004 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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