发明名称 LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a light-emitting element having a new structure, and to provide a method of manufacturing the same.SOLUTION: A light-emitting element includes: a second-conductivity-type semiconductor layer 21; an active layer 22 on the second-conductivity-type semiconductor layer; a first-conductivity-type semiconductor layer 23 on the active layer; and a non-conductive semiconductor layer including a light extraction structure on the first-conductivity-type semiconductor layer. Alternatively, the light-emitting element includes: a second-conductivity-type semiconductor layer; an active layer on the second-conductivity-type semiconductor layer; a first-conductivity-type semiconductor layer on the active layer; a non-conductive semiconductor layer on the first-conductivity-type semiconductor layer; and a light extraction structure 25 on the non-conductive semiconductor layer. A method of manufacturing the light-emitting element includes the steps of: forming the non-conductive semiconductor layer on a substrate; forming the first-conductivity-type semiconductor layer, the active layer, and the second-conductivity-type semiconductor layer on the non-conductive semiconductor layer; forming a second electrode layer on the second-conductivity-type semiconductor layer; removing the substrate; and forming the light-extraction structure on the non-conductive semiconductor layer.
申请公布号 JP2014017520(A) 申请公布日期 2014.01.30
申请号 JP20130207935 申请日期 2013.10.03
申请人 LG INNOTEK CO LTD 发明人 KIM SUN-KYUN;CHO HYUN KYONG
分类号 H01L33/44;H01L33/10;H01L33/20;H01L33/46 主分类号 H01L33/44
代理机构 代理人
主权项
地址