PATTERN FORMATION METHOD AND SUBSTRATE PROCESSING SYSTEM

摘要

PROBLEM TO BE SOLVED: To successfully form a recess pattern on a substrate.SOLUTION: There is provided a pattern formation method which comprises the steps of: forming a recess of a prescribed pattern in a silicon-containing film on a substrate by etching the silicon-containing film by the plasma generated from an etching gas including a carbon fluoride (CF) based gas via a mask (etching step); and depositing a silicon oxide film on a surface of the recess of the prescribed pattern by oxidizing a layer absorbed into the surface of the recess of the prescribed pattern using a silicon compound gas by the plasma generated from an oxidizing gas or depositing a silicon nitride film on the surface of the recess of the prescribed pattern by nitriding the layer absorbed into the surface of the recess of the prescribed pattern using the silicon compound gas by the plasma generated from a nitriding gas (depositing step).