发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR REDUCED BIAS TEMPERATURE INSTABILITY (BTI) IN SILICON CARBIDE DEVICES |
摘要 |
A system includes a silicon carbide (SiC) semiconductor device and a hermetically sealed packaging enclosing the SiC semiconductor device. The hermetically sealed packaging is configured to maintain a particular atmosphere near the SiC semiconductor device. Further, the particular atmosphere limits a shift in a threshold voltage of the SiC semiconductor device to less than 1 V during operation. |
申请公布号 |
US2014027782(A1) |
申请公布日期 |
2014.01.30 |
申请号 |
US201213562029 |
申请日期 |
2012.07.30 |
申请人 |
MICHAEL JOSEPH DARRYL;ARTHUR STEPHEN DALEY;GENERAL ELECTRIC COMPANY |
发明人 |
MICHAEL JOSEPH DARRYL;ARTHUR STEPHEN DALEY |
分类号 |
H01L21/56;H01L29/16;H01L29/78 |
主分类号 |
H01L21/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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