| 摘要 |
Contact with a floating body of an FET in SOI may be formed in a portion of one of the two diffusions of the FET, wherein the portion of the diffusion (such as N-, for an NFET) which is "sacrificed" for making the contact is a portion of the diffusion which is not immediately adjacent (or under) the gate. This works well with linked body FETs, wherein the diffusion does not extend all the way to BOX, hence the linked body (such as P-) extends under the diffusion where the contact is being made. An example showing making contact for ground to two NFETs (PG and PD) of a 6T SRAM cell is shown. |
