SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING COMPOSITE SUBSTRATE

摘要

Provided is a semiconductor substrate having, in the following sequence, a first semiconductor crystal layer, a second semiconductor crystal layer, and a third semiconductor crystal layer provided on a semiconductor crystal layer formation substrate; both the speed of etching of the first semiconductor crystal layer by a first etching agent and the speed of etching of the third semiconductor crystal layer by the first etching agent being greater than the speed of etching of the second semiconductor crystal layer by the first etching agent, and both the speed of etching of the first semiconductor crystal layer by a second etching agent and the speed of etching of the third semiconductor crystal layer by the second etching agent being less than the speed of etching of the second semiconductor crystal layer by the second etching agent.