SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide MOSFET capable of moderating the electric field applied to an oxide film at the time of off.SOLUTION: In a silicon carbide MOSFET, an electric-field relaxation region is provided on the entire surface directly under a gate oxide film in a JFET region. The electric-field relaxation region is formed to shallower than a well region. The impurity concentration of the electric-field relaxation region is set to be higher than the impurity concentration of a region shallower than the electric-field relaxation region in the well region.