| 摘要 |
Disclosed is a method of fabricating a semiconductor device. The method comprises: forming contact sacrificial layers (2, 3) on a substrate (1), and etching the contact sacrificial layers (2, 3) to form contact sacrificial patterns, the contact sacrificial pattern covering a source region and a drain region and having a gate groove exposing the substrate (1); forming a gate sidewall (7) and gate stack structures (8, 9A, 9B) in the gate groove; partially or completely etching away the contact sacrificial pattern covering the source region and the drain region; forming a source drain contact groove; and forming source drain contacts (10, 11A, 11B) in the source drain contact groove. By means of a double-layer contact sacrificial layer process, the method through effectively lowers a pitch between a gate sidewall and a contact region, and increases the area of a contact region, thereby effectively reducing the parasitic resistance of the device. |
