MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE

摘要

A method of manufacturing a semiconductor device is provided which includes forming a target layout; producing a skewed layout that includes retargeting the target layout; detecting an envelope of the skewed layout; generating a jog-free layout according to the detected envelope; fragmenting the jog-free layout; acquiring a layout that converges towards the skewed layout by performing an optical proximity correction on the fragmented jog-free layout; and patterning a material for forming the semiconductor device using the acquired layout.