METHOD FOR FORMING MOS DEVICE PASSIVATION LAYER AND MOS DEVICE

摘要

Provided are a method for forming a MOS device passivation layer (4') and a MOS device. The method for forming the MOS device passivation layer (4') comprises: forming a substrate (1); forming a medium (2) on the substrate (1); patterning the medium (2) to expose a part of the substrate; forming metal (3) on the exposed part of the substrate and the medium (2); forming tetraethyl orthosilicate (TEOS) (41) on the metal (3); forming phosphosilicate glass (PSG) (42) on the (TEOS) (41); and forming nitrogen oxides (43) on the (PSG) (42). Therefore, the cracking problem of the passivation layer (4') can be alleviated.