| 摘要 |
Disclosed is a positive/negative voltage generation circuit in a silicon-on-insulator (SOI) process, comprising: an NMOS transistor and a PMOS transistor which constitute a phase inverter, a parasitic diode between the source electrode and the substrate of a metal oxide semiconductor field-effect transistor (MOS transistor) in an SOI process, a first transfer capacitor, a second transfer capacitor, a first output capacitor, a second output capacitor, a first diode arranged between the first transfer capacitor and the first output capacitor, and a second diode arranged between the second transfer capacitor and the second output capacitor. By means of two transistor switches, four capacitors and several diodes, a positive output voltage and a negative output voltage can be generated simultaneously, and the circuit only uses a single-phase clock. Compared with the existing positive voltage generation circuit and negative voltage generation circuit, the circuit of the present invention is simple in structure and has no need for a two-phase non-overlapping clock, effectively saving the chip area. |
