发明名称 |
SEMICONDUCTOR LAMINATE AND PROCESS FOR PRODUCTION THEREOF, AND SEMICONDUCTOR ELEMENT |
摘要 |
A semiconductor laminate having small electric resistivity in the thickness direction; a process for producing the semiconductor laminate; and a semiconductor element equipped with the semiconductor laminate. include a semiconductor laminate including a Ga203 substrate; an AlGalnN buffer layer which is formed on the Ga203 substrate; a nitride semiconductor layer which is formed on the AlGalnN buffer layer and contains Si; and an Si-rich region which is formed in an area located on the AlGalnN buffer layer side in the nitride semiconductor layer and has an Si concentration of 5×1018/cm3 or more. |
申请公布号 |
US2014027770(A1) |
申请公布日期 |
2014.01.30 |
申请号 |
US201214110420 |
申请日期 |
2012.04.03 |
申请人 |
IIZUKA KAZUYUKI;MORISHIMA YOSHIKATSU;SATO SHINKURO |
发明人 |
IIZUKA KAZUYUKI;MORISHIMA YOSHIKATSU;SATO SHINKURO |
分类号 |
H01L29/267 |
主分类号 |
H01L29/267 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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