| 发明名称 |
MOSFET GATE AND SOURCE/DRAIN CONTACT METALLIZATION |
| 摘要 |
A MOSFET is described incorporating a common metal process to make contact to the source, drain and the metal gate respectively which may be formed concurrently with the same metal or metals. |
| 申请公布号 |
US2014027865(A1) |
申请公布日期 |
2014.01.30 |
| 申请号 |
US201314043848 |
申请日期 |
2013.10.02 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SEO SOON-CHEON;DORIS BRUCE B.;YANG CHIH-CHAO |
| 分类号 |
H01L29/66;H01L29/78 |
主分类号 |
H01L29/66 |
| 代理机构 |
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