| 摘要 |
<p>The purpose of the present invention is to improve the photoelectric conversion efficiency of a photoelectric converting device. A photoelectric converting device (11) is provided with an electrode layer (2), a first semiconductor layer (3), disposed on the electrode layer (2), having a chalcopyrite structure that includes a group 11 element, a group 13 element, a chalcogen, and oxygen, and a second semiconductor layer (4) disposed on the first semiconductor layer (3) and forming a p-n junction with the first semiconductor (3). The atomic concentration of oxygen in the first semiconductor (3) is less in the area of the upper surface portion on the second semiconductor layer (4) side than the central portion of the thickness of the first semiconductor layer (3).</p> |
