| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride compound semiconductor light-emitting element that can be easily cleaved and divided without patterning to a reflection layer covering whole of a rear face.SOLUTION: A method of manufacturing a nitride compound semiconductor light-emitting element 1 provided with a p-side electrode 6 and an n-side electrode 7 on a surface side, comprises the steps of: forming an n-type nitride compound semiconductor layer 3, an active layer 4, and a p-type nitride compound semiconductor layer 5 on a surface of a substrate 2; polishing a rear face of the substrate 2 to make the substrate 2 thin; forming a division assistance part 2a assisting division of the substrate 2, inside the substrate 2; forming an optical multilayer film reflection layer 8 reflecting light emitted from the active layer 4, on the rear face of the substrate 2; forming a metal reflection layer 9 reflecting light transmitted through the optical multilayer film reflection layer 8, on a rear face of the optical multilayer film reflection layer 8; and dividing the substrate 2 into a plurality of nitride compound semiconductor light-emitting elements 1 at a division surface including the division assistance part 2a. |
