| 摘要 |
PROBLEM TO BE SOLVED: To reduce an impurity amount in a film in formation of a metal compound film by atom layer deposition (ALD).SOLUTION: In formation of a metal compound film by atomic layer deposition, which includes a step of making a metal material adsorb onto a base by supplying a metal material gas, a step of purging the metal material gas in a deposition space, a step of supplying a reaction gas to modify the metal material into a metal compound and a step of purging the reaction gas as one cycle, a uniform atomic layer is formed in the first cycle by setting a supply time of the metal material gas in the first cycle longer than a supply time in each of the second and the following cycles. |
