| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which achieve a simple process or inhibit characteristic failures.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming a first conductive film and a second conductive film on a substrate; forming a first insulation film on the first conductive film and the second conductive film; selectively forming a charge storage layer on the first conductive film with the first insulation film therebetween; forming a second insulation film on the first insulation film and the charge storage layer; forming on the second insulation film, a first semiconductor film which overlaps the first conductive film, a second semiconductor film which overlaps the second conductive film, and a third semiconductor film which does not overlap the first conductive film and the second conductive film; forming a third insulation film on the first semiconductor film, the second semiconductor film and the third semiconductor film; and forming a third conductive film above the third semiconductor film with the third insulation film therebetween. |
