| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate with a &bgr;-GaOsingle crystal film, used for manufacturing of gallium nitride used as a light emitting element such as a light emitting diode or a laser diode and having a large diameter, and to provide a manufacturing method of the substrate with a &bgr;-GaOsingle crystal film, capable of simply manufacturing the substrate at low cost.SOLUTION: The substrate with &bgr;-GaOsingle crystal film has a &bgr;-GaOsingle crystal film grown on a surface of a sapphire substrate having a large diameter by a liquid phase epitaxial method. The manufacturing method of the substrate with the &bgr;-GaOsingle crystal film comprises: melting a gallium oxide powder and a lead based powder to prepare a lead based molten liquid; inserting the sapphire substrate having a large diameter into the molten liquid maintained at the supercooling temperature while lowering the molten liquid to the supercooling temperature; and growing the &bgr;-GaOsingle crystal film on the surface of the sapphire substrate by the liquid phase epitaxial method. |
