发明名称 SENSE AMPLIFIER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME
摘要 A sense amplifier circuit includes a first pull-up transistor configured to pull-up drive a data bar line in response to a voltage of a data line, a first pull-down transistor configured to pull-down drive the data bar line in response to the voltage of the data line, and to receive the voltage of the data line through a back gate of the first pull-down transistor, a second pull-up transistor configured to pull-up drive the data line in response to a voltage of the data bar line, and a second pull-down transistor configured to pull-down drive the data line in response to the voltage of the data bar line, and to receive the voltage of the data bar line through a back gate of the second pull-down transistor.
申请公布号 US2014029359(A1) 申请公布日期 2014.01.30
申请号 US201213717269 申请日期 2012.12.17
申请人 SK HYNIX INC. 发明人 KIM HYUNG-SOO
分类号 G11C7/06;G11C7/12;H03F3/16 主分类号 G11C7/06
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