发明名称 |
Semiconductor Device Including a Dielectric Structure in a Trench |
摘要 |
A semiconductor device includes a trench extending into a drift zone of a semiconductor body from a first surface. The semiconductor device further includes a gate electrode in the trench and a body region adjoining a sidewall of the trench. The semiconductor device further includes a dielectric structure in the trench. The dielectric structure includes a high-k dielectric in a lower part of the trench. The high-k dielectric includes a dielectric constant higher than that of SiO2. An extension of the high-k dielectric in a vertical direction perpendicular to the first surface is limited between a bottom side of the trench and a level where a bottom side of the body region adjoins the sidewall of the trench. |
申请公布号 |
US2014027812(A1) |
申请公布日期 |
2014.01.30 |
申请号 |
US201213556335 |
申请日期 |
2012.07.24 |
申请人 |
SCHULZE HANS-JOACHIM;HIRLER FRANZ;FELSL HANS-PETER;NIEDERNOSTHEIDE FRANZ-JOSEF;INFINEON TECHNOLOGIES AG |
发明人 |
SCHULZE HANS-JOACHIM;HIRLER FRANZ;FELSL HANS-PETER;NIEDERNOSTHEIDE FRANZ-JOSEF |
分类号 |
H01L29/78;H01L29/739 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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