发明名称 |
SOS SUBSTRATE HAVING LOW SURFACE DEFECT DENSITY |
摘要 |
Method of making a bonded SOS substrate with a semiconductor film on or above a sapphire substrate by implanting ions from a surface of the semiconductor substrate to form an ion-implanted layer; activating at least a surface of one of the sapphire substrate and the semiconductor substrate from which the ions have been implanted; bonding the surface of the semiconductor substrate and the surface of the sapphire substrate at a temperature of from 50° C. to 350° C.; heating the bonded substrates at a maximum temperature of from 200° C. to 350° C.; and irradiating visible light from a sapphire substrate side or a semiconductor substrate side to the ion-implanted layer of the semiconductor substrate to make the interface of the ion-implanted layer brittle at a temperature of the bonded body higher than the temperature at which the surfaces were bonded, to transfer the semiconductor film to the sapphire substrate. |
申请公布号 |
US2014030870(A1) |
申请公布日期 |
2014.01.30 |
申请号 |
US201313946206 |
申请日期 |
2013.07.19 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
AKIYAMA SHOJI;ITO ATSUO;TOBISAKA YUJI;KAWAI MAKOTO |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|