发明名称 CIRCUIT FOR REDUCING NEGATIVE BIAS TEMPERATURE INSTABILITY
摘要 A control circuit comprises a first NOR gate, a first NMOS transistor, and a first PMOS transistor. The control circuit also comprises an output node. The control circuit further comprises a half latch keeper circuit coupled to a gate of the first NMOS transistor and to a gate of the first PMOS transistor. The half latch keeper circuit is configured to keep the output node at a logical 1 during a standby mode. The control circuit additionally comprises an operational PMOS transistor coupled to the output node. An output of the first NOR gate is coupled to a gate of the operational PMOS transistor. The control circuit is configured to turn off the operational PMOS transistor during the standby mode.
申请公布号 US2014028350(A1) 申请公布日期 2014.01.30
申请号 US201314045364 申请日期 2013.10.03
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHERN CHAN-HONG;HSUEH FU-LUNG;HUANG MING-CHIEH;SHEFFIELD BRYAN;LIN CHIH-CHANG
分类号 H03K19/0185 主分类号 H03K19/0185
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