| 摘要 |
<p>Disclosed are a sensor and a method for manufacturing same. The sensor comprises: a substrate; a group of gate lines and a group of data lines, arranged in a cross pattern; and a plurality of sensing units arranged in an array and defined by the group of gate lines and the group of data lines, each sensing unit comprising a thin film transistor element and a photodiode sensing element, the thin film transistor element being of a bottom gate structure. The photodiode sensing element comprises: a receiving electrode connected to a source, a photodiode located on the receiving electrode, a transparent electrode located on the photodiode; and a bias line located above the transparent electrode and connected to the transparent electrode, the bias line being arranged parallel to the gate lines. Compared to the prior art, with the sensor provided in embodiments of the present invention, the number of mask plates used in the manufacturing process is reduced, the manufacturing cost is reduced, the manufacturing process is simplified, and the equipment production capacity and the product yield are greatly improved.</p> |
