SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

Provided is a semiconductor device, comprising: multiple fins (1A, 1B), provided on a substrate (1) and extending along a first direction; multiple gate stack structures (9A, 9B), extending along a second direction and spanning each fin; multiple stress layers (7), provided in the fins at two sides of the gate stack structure and provided with multiple source and drain regions (7A) inside; and multiple channel regions (1C), provided between the multiple source and drain regions along the first direction, the multiple gate stacking structures surrounding the multiple channels. Also provided is a manufacturing method of the device. A hard mask and a dummy gate are combined to penetrate and corrode the fins located at the channel region, to self-aligningly form a metal-multigate-all-around nanowire, thereby enhancing the device performance.