| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering target for an oxide semiconductor having high density and low resistance, and to provide a thin film transistor having a wide process window and high reliability.SOLUTION: A sputtering target contains an oxide containing indium, zinc, and metal M, and includes crystal having a composition of MInO. A maximum peak intensity Iof the crystal having a composition of MInOin an X-ray diffraction and a maximum peak intensity Iof an oxide other than the crystal having a composition of the MInOsatisfy 0.01≤I/I≤1.8. |
