FIN-FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a fin-field effect transistor and a manufacturing method of the same.SOLUTION: A manufacturing method of a finFET comprises: a step of forming first and second fins of a finFET, which extend upward from a semiconductor substrate and shallow trench isolation (STI) regions between the first and second fins by forming a distance between a top face of the STI regions and each top face of the first and second fins; a step of providing first and second fin extension parts on the top faces and lateral faces of the first and second fins above the top face of the STI region, respectively; a step of removing a material from the STI regions to increase a distance between the top face of the STI regions and each top face of the first and second fins; a step of accumulating a conformal stressor dielectric material on the fins and the STI regions; and a step of reflowing the conformal stressor dielectric material in such a manner as to flow from the top face of the STI regions into between the first and second fins thereby to apply stress to a channel of the finFET.