| 摘要 |
A sensor and a manufacturing method therefor. The sensor comprises: a base substrate (32), one set of gate wires (30) and one set of data wires (31) in a crisscross arrangement, and multiple sensor units arranged in an array and defined by the one set of gate wires (30) and by the one set of data wires (31). Each sensor unit comprises a photodiode sensor component and a thin-film transistor component, where the photodiode sensor component comprises: a bias wire (42) arranged on the base substrate (32), a transparent electrode (41) arranged above the bias wire (42) and electrically contacted with the bias wire (42), a photodiode transistor (40) arranged above the transparent electrode (41), and a receiver electrode (39) arranged above the photodiode transistor (40), and where the thin-film transistor component is arranged above the photodiode transistor (40). When the sensor is working, light passes through the base substrate (32) and is transmitted directly onto the photodiode sensor component, thus, compared with the prior art, greatly reducing light loss and increasing the absorption and utilization rates of the light. |
