| 摘要 |
An EUV lithography apparatus (1) includes: a light source (15) for generating radiation (17) for the illumination of particles (P) present in the gas phase and present in the EUV lithography apparatus (1) along a light area (18), and a detector, for detecting radiation (17a) from the light source (15) that is scattered at the illuminated particles (P) in a test region (19) captured by the detector. Also, a method for detecting particles (P) in an EUV lithography apparatus (1) includes: producing a light area (18) for illuminating the particles (P) present in the gas phase, detecting radiation (17a) scattered at the illuminated particles (P) in a test region (19), and determining a number (N) of particles in the test region (19) on the basis of the detected radiation (17a). |
