SEMICONDUCTOR DEVICE AND METHOD FOR REDUCED BIAS TEMPERATURE INSTABILITY (BTI) IN SILICON CARBIDE DEVICES

摘要

A system includes a silicon carbide (SiC) semiconductor device and a hermetically sealed packaging enclosing the SiC semiconductor device. The hermetically sealed packaging is configured to maintain a particular atmosphere near the SiC semiconductor device. Further, the particular atmosphere limits a shift in a threshold voltage of the SiC semiconductor device to less than 1 V during operation.