| 摘要 |
PROBLEM TO BE SOLVED: To provide a process of manufacturing a mask blank for EUV lithography, excellent in in-plane uniformity of peak reflectance of light in an EUV wavelength region and in-plane uniformity of a center wavelength of reflected light in the EUV wavelength region.SOLUTION: The process of manufacturing a substrate with a reflective layer for EUV lithography (EUVL) formed on the substrate with a reflective layer that reflects EUV light suppresses an in-plane distribution of peak reflectance of EUV light from a substrate center in a radial direction by considering at least one layer out of each layer constituting a multilayer reflection film 12, which is a reflective layer formed by alternately laminating a low refractive index layer and a high refractive index layer a plurality of times by a sputtering method, to be a reflectance distribution correction layer provided with a film thickness distribution from the substrate center in the radial direction according to an in-plane distribution of peak reflectance of light in an EUV wavelength region from the substrate center in the radial direction on the surface of the multilayer reflection film. |
