发明名称 |
ON-DIE TERMINATION CIRCUIT, SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM |
摘要 |
An ODT circuit is activated/deactivated in response to a latency control signal or a clock enable signal. The ODT circuit includes an ODT control circuit and an ODT section. The ODT control circuit determines an ODT status based on a read latency control signal (RL) and/or a write latency control signal (WL) to generate an ODT control signal. The ODT section is activated/deactivated in response to the ODT control signal. |
申请公布号 |
US2014028345(A1) |
申请公布日期 |
2014.01.30 |
申请号 |
US201313755418 |
申请日期 |
2013.01.31 |
申请人 |
OH KI-SEOK;PARK JOON-YOUNG;AHN YONG-HUN;BAE YONG-CHEOL;JEONG YONG-GWON;CHOI JONG-HYUN |
发明人 |
OH KI-SEOK;PARK JOON-YOUNG;AHN YONG-HUN;BAE YONG-CHEOL;JEONG YONG-GWON;CHOI JONG-HYUN |
分类号 |
H03K19/0175 |
主分类号 |
H03K19/0175 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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