发明名称 ON-DIE TERMINATION CIRCUIT, SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM
摘要 An ODT circuit is activated/deactivated in response to a latency control signal or a clock enable signal. The ODT circuit includes an ODT control circuit and an ODT section. The ODT control circuit determines an ODT status based on a read latency control signal (RL) and/or a write latency control signal (WL) to generate an ODT control signal. The ODT section is activated/deactivated in response to the ODT control signal.
申请公布号 US2014028345(A1) 申请公布日期 2014.01.30
申请号 US201313755418 申请日期 2013.01.31
申请人 OH KI-SEOK;PARK JOON-YOUNG;AHN YONG-HUN;BAE YONG-CHEOL;JEONG YONG-GWON;CHOI JONG-HYUN 发明人 OH KI-SEOK;PARK JOON-YOUNG;AHN YONG-HUN;BAE YONG-CHEOL;JEONG YONG-GWON;CHOI JONG-HYUN
分类号 H03K19/0175 主分类号 H03K19/0175
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