发明名称 |
METHOD FOR PRODUCING P-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAYER, METHOD FOR PRODUCING ZnO BASED COMPOUND SEMICONDUCTOR ELEMENT, P-TYPE ZnO BASED COMPOUND SEMICONDUCTOR SINGLE CRYSTAL LAYER, ZnO BASED COMPOUND SEMICONDUCTOR ELEMENT, AND N-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAMINATE STRUCTURE |
摘要 |
A method for producing a p-type ZnO based compound semiconductor layer is provided. The method comprises the steps of (a) preparing an n-type single crystal ZnO based compound semiconductor structure containing a Group 11 element which is Cu and/or Ag and at least one Group 13 element selected from the group consisting of B, Ga, Al, and In, and (b) annealing the n-type single crystal ZnO based compound semiconductor structure to form the p-type ZnO based compound semiconductor layer co-doped with the Group 11 element and the Group 13 element. |
申请公布号 |
US2014027766(A1) |
申请公布日期 |
2014.01.30 |
申请号 |
US201313948771 |
申请日期 |
2013.07.23 |
申请人 |
STANLEY ELECTRIC CO., LTD. |
发明人 |
SAITO CHIZU;KATO HIROYUKI;SANO MICHIHIRO |
分类号 |
H01L21/02;H01L29/12 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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